Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures

Abstract

Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors.