Altermagnetoelectric Spin Field Effect Transistor

Abstract

Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths. Here we propose a different operating principle based on multiferroic altermagnets, in which spin splitting is tuned by an electric field through symmetry control rather than conventional spin-orbit physics. Using an effective model combined with quantum transport simulations, we show that the conductance is determined by the degree of matching between the electrically controlled spin texture of the channel and the fixed spin polarization of ferromagnetic contacts, enabling clear ON and OFF states. Remarkably, we also address a long-standing challenge in multiferroic device design: spintronic channels require metallic carriers, whereas ferroelectricity is usually suppressed in metals. We resolve this conflict by imprinting multiferroic altermagnetism into highly conductive materials via the proximity effect. First-principles calculations for graphene on multiferroic vanadium sulfide halides confirm that graphene acquires a ferroelectrically switchable spin splitting while retaining its metallic character. These results establish a practical route to SFET implementation and identify multiferroic altermagnets as a versatile platform for next-generation spintronic devices.