Mapping vacancy and bonding electron distributions around aluminium nanovoids

Abstract

All materials have defects and many contain nanostructures, both of which disrupt chemical bonding - the basis of materials properties. No experimental measurements of bonding electron distributions associated with defects and nanostructures have ever been possible. We present a method enabling such measurements and interrogate nanovoids surrounded by vacancies - the most fundamental of nanostructures and defects - in aluminium. We measure the volume of a vacancy with 3% uncertainty and map vacancy concentrations surrounding nanovoids with nanometre resolution in three dimensions where previously only two-dimensional mapping was possible. We discover that radiation-damaged voids can "heal". Our bonding measurements are depth-resolved, vacancy-sensitive, and agree with density functional theory. This work opens bonding electron density measurements to inhomogeneous nanostructured multi-phased materials so that the electronic origins of phenomena such as strengthening, weakening, interface functionality, solute diffusion and phase transformations within them may be revealed.