An Integrated DFT-FDTD Design of Plasmon-Enhanced Lead-Free CsSnxGe1-xI3 Perovskite LEDs
Abstract
CsSnxGe1-xI3 as lead-free perovskites are promising for next generation NIR emitting perovskite LEDs due to their tunable bandgaps and stability. However, they suffer from poor light extraction efficiency, and accurate composition-specific optical data for these materials remain scarce. This study presents a DFT-FDTD framework to optimize light extraction via compositional tuning and plasmonic enhancement. First, DFT calculations were performed to obtain composition-specific complex refractive index and extinction coefficient values for x = 0, 0.25, 0.5, 0.75, and 1. Results show bandgap increased from 1.331 eV for CsSnI3 to 1.927 eV for CsGeI3 with increasing Ge content, while refractive index ranges from 2.2 to 2.6 across compositions. These optical constants were then used as inputs for FDTD simulations of a PeLED structure with optimized Au/SiO2 core-shell nanorods for plasmonic enhancement. A 12.1-fold Purcell enhancement was achieved for CsSn0.25Ge0.75I3, while light extraction efficiency reached 25% for CsSn0.5Ge0.5I3. LEE enhancement of 36% was obtained for CsSnI3, and spectral overlap between emitter and plasmon resonance reached 96% for Sn-rich compositions. Design guidelines indicate CsSn0.5Ge0.5I3 offers optimal balance of extraction efficiency (25%), Purcell enhancement (5.3×), spectral overlap (93%), and oxidation stability for wearable and flexible optoelectronic applications, while CsSn0.25Ge0.75I3 is recommended for applications prioritizing spontaneous emission rate.
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