Interplay of Defects and the Charge Density Wave State in Hf-Doped ZrTe$_{3}$

Abstract

We carry out temperature-dependent scanning tunneling microscopy (STM) studies of the charge density wave (CDW) compound ZrTe$_3$ which is intentionally doped with Hf. Previous bulk studies tie Hf doping to an enhancement of the CDW transition temperature (T$_{CDW}$). In our work, by combining STM measurements with density functional theory (DFT) calculations, we observe and identify multiple defects in Zr$_{0.95}$Hf$_{0.05}$Te$_3$. Surprisingly, instead of finding clear structural or electronic signatures associated with Hf dopants, we determine the origin of the observed defects are consistent with Te and Zr vacancies. Further, our temperature dependent STM measurements allow us to examine CDW pinning to both types of observed defects below and above T$_{CDW}$.