Simulating alternating bias assisted annealing of amorphous oxide tunnel junctions

Abstract

Amorphous oxide tunneling barriers, primarily formed from aluminum, represent one of the most widely adopted platforms for superconducting quantum bits (qubits). To overcome challenges associated with defects and sample variance among the tunneling barriers, the methodology of alternating bias assisted annealing (ABAA) was introduced in Pappas et. al[1]. The process of applying alternating bias to the barrier and subsequently aging before use was shown to reduce defects in the barrier. Namely, defects that give rise to two-level systems, coupling to the qubit and expediting decoherence. In this work we replicate an expedited ABAA process through a combination of ab-initio molecular dynamics and machine-learned potentials, illuminating how ABAA effects the energy landscape of the barrier.