Enabling high giant magnetoresistance in simple spin valves with ultrathin seed and free layers

Abstract

Emerging spin-orbit-torque devices based on spin valves require a thin magnetic free layer to maximize the torque per moment. However, reducing the free-layer thickness to $\lesssim 2$ nm deteriorates the giant magnetoresistance (GMR) signal for electrical readout. Here, we demonstrate that the addition of a 1-nm Cu seed layer promotes sharp interfaces in simple polycrystalline Co-based spin valves, enabling high GMR ratios of 5-7% at sub-2-nm free-layer thicknesses. Our work offers a pathway for engineering high-signal GMR readout in spin-orbit-torque digital memories and neuromorphic computers.