Topology-Directed Silicide Formation: An Explanation for the Growth of C49-TiSi2 on the Si(100) Surface
Abstract
Designing metal-semiconductor junctions is essential for optimizing the performance of modern nanoelectronic devices. A widely used material is TiSi2, which combines low electronic resistivity with good endurance. However, its multitude of polymorphs continues to pose a challenge for device fabrication. In particular, the naturally occurring formation of the metastable C49-TiSi2 modification remains poorly understood and is problematic due to its unfavorable electronic properties. Based on extensive DFT calculations, we present a comprehensive model of Ti adsorption on Si(100) that highlights the pivotal role of surface topology for the initial stages of the interfacial TiSi2 formation process. We show that the interplay between Si surface dimers, the symmetry of the Si(100) surface, and the incorporation of Ti adsorbates below the surface drives an adsorption pattern that yields a nucleation template for the C49-TiSi2 phase. Our atomistic model rationalizes experimental observations like the Stranski-Krastanov growth mode, the preferential formation of C49-TiSi2 despite it being less favorable than the competing C54 phase, and why disruption of the surface structure restores thermodynamically driven growth of the latter. Ultimately, this novel perspective on the unique growth of TiSi2 will help to pave the way for next-generation electronic devices.
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