Enhancement of anomalous Hall effect in Si/Fe multilayers
Abstract
Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained in [Si(50 angstrom)/Fe(tFe)]20 multilayers when decreasing the Fe layer thickness from 100 Angstrom to 20 Angstrom. The largest anomalous Hall coefficient (Rs) of 1.4 x 10-7 Ohm m/T was found for tFe=20 Angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R0 was about two orders of magnitude larger than that of pure Fe. The Rs was found to vary with the longitudinal electronic resistivity, Rho as Rs proportional to (Rho)2.2, indicating the role of interfaces for the enhancement of the anomalous Hall effect in the multilayers. An increase of Hall sensitivity from 9 mOhm/T to 1.2 Ohm/T is observed on decreasing tFe from 100 Angstrom to 10 Angstrom. The high Hall sensitivity obtained is about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.
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