Giant anomalous Hall effect in ultrathin Si/Fe bilayers
Abstract
Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(tFe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (Rs) were observed upon decreasing the Fe layer thickness tFe from 200 to 10 Angstrom. The Rs observed for tFe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between Rs and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported.
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