Epitaxial thin film growth in the U-Ge binary system
Abstract
We explore the U-Ge phase diagram using thin film growth by co-deposition of U and Ge via d.c. magnetron sputtering. Using three different single crystal substrates - MgO, CaF2 and SrTiO3 - we have stabilised mixed phase films of mostly UGe3 and UGe, with evidence of UGe2 as well. At higher temperatures UO2 forms as a consequence of gettering of oxygen from several types of substrate. Several UGe3 dominated samples grown on MgO substrates have also been characterised electrically, showing residual resistivity ratios up to six.
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