Thermally-Activated Epitaxy of NbO
Abstract
We demonstrate a thermally-activated epitaxy window for the growth of NbO at temperatures exceeding 1000 oC. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO, for which a consensus has not yet been made. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.
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