Flash annealing-engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance

Abstract

Dielectric capacitors are essential for energy storage systems due to their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000 oC/s, which facilitates the rapid crystallization of PbZrO3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with sub-grain boundaries fraction of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kV/cm) and large polarization (70 uC/cm2). Consequently, we have achieved a high energy storage density of 63.5 J/cm3 and outstanding thermal stability with performance degradation less than 3% up to 250 oC. Our approach is extendable to ferroelectrics like Pb(Zr0.52Ti0.48)O3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability.