Correlated electronic states at a ferromagnetic oxide interface

Abstract

We propose a minimal tight-binding model for the electronic interface layer of the LaAlO$_3$/SrTiO$_3$ heterostructure with oxygen vacancies. In this model, the effective carriers are subject to oxygen vacancy induced magnetic impurities. Both the effects of random on-site potentials and Zeeman-like exchange interactions between correlated carriers and magnetic impurities are taken into account. By applying the combined coherent potential approximation (CPA) and dynamical mean-field theory (DMFT) for a ferromagnetic state, we uncover a disordered Fermi-liquid regime for the majority-spins and a low energy scale which controls the transport of the minority-spin carriers, both induced by the magnetic impurities.