Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices

Abstract

Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for enabling such high-frequency RF technologies. However, the widespread adoption of AlGaN-based RF devices is limited by thermal-management challenges arising from the intrinsically low thermal conductivity of AlGaN, which leads to higher device thermal resistance for a given geometry compared to GaN RF devices. As a result, these next-generation devices are highly susceptible to self-heating. This study investigates the thermal behavior of UWBG AlGaN devices, focusing on the effects of AlGaN channel thickness, substrate technology, and high-k material integration on reducing device thermal resistance to enable high-power operation. Experimental results demonstrate a record-low thermal resistance of 3.96 mm$\cdot$K/W when an AlN substrate is employed and the AlGaN channel thickness is reduced to 5 nm. These findings provide valuable insights into mitigating thermal limitations in UWBG devices through device-level engineering and the strategic integration of high-k materials.