Anisotropy reduction and tunability of hole-spin qubit g-factor in strained parabolic Ge/SiGe quantum wells

Abstract

Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also makes them susceptible to charge noise and inhomogeneous strain. This is further exacerbated by the highly anisotropic g-factor of the planar design. Although there are some known strategies to suppress charge noise, one approach is to engineer an isotropic g-factor. In this work we analyze how qubit confinement profile affects the g-factor of hole-spin qubits. We show that decreasing the characteristic in-plane qubit confinement length reduces the g-factor anisotropy. We perform analytical and numerical analysis to compare two types of quantum wells: square wells and parabolic wells. We show that square wells have limited tunability, while parabolic wells offer broader tunability, making them more promising for qubit engineering.