Orbital to charge current conversion in copper oxide heterostructures

Abstract

We investigate the orbital-to-charge current conversion in CoFeB|CuO bilayers as a function of CuO thickness, employing orbital pumping via ferromagnetic resonance. The dynamic injection of orbital angular momentum into the CuO layer generates a transverse voltage through the Inverse Orbital Hall Effect (IOHE). By systematically varying the CuO thickness from 2 nm to 30 nm, we observe a pronounced dependence of the IOHE-induced voltage on the CuO layer thickness, indicating efficient orbital-to-charge conversion. These results highlight the key role of the orbital degree of freedom in orbitronics and provide insights into the potential of transition-metal oxides for next-generation orbitronic devices.