First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon

Abstract

Spin-active color centers are the basis of solid-state defect systems utilized in quantum technologies. Although silicon is an emerging host material for quantum defects, there is an urgent need to characterize color centers with a non-zero electron-spin ground state in this platform, in addition to the prominent T-center. In this work, we carry out first-principles calculations to identify the possible atomic structures originating the experimentally observed N-line series in silicon. We propose that the core structure of the N1 center consists of a neighboring carbon and nitrogen interstitial atoms. Furthermore, we predict that more complex defects involving self-interstitial and interstitial oxygen atoms are feasible candidates for the further lines in the series. As all of these color centers are isoelectronic to the T-center, they provide a family of alternative spin qubits with emission near the low-energy telecommunication bands.