Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers

Abstract

The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and layer degrees of freedom in an altermagnetic bilayer via sliding ferroelectricity. Using first-principles calculations, we show that an interlayer translation can induce a switchable out-of-plane ferroelectric polarization in bilayer CuF2, which directly couples to and reverses the d-wave altermagnetic spin splitting. Notably, the altermangetic spin splitting is layer-locked, the sliding ferroelectricity-driven switching thus embodying a nonvolatile spin-layertronics functionality that couples spin-polarized transport and layer degree of freedom in a single platform. We show that in quadrilayer CuF2, four polarization states are identified which may offer multi-state logic device applications. These findings establish sliding ferroelectricity as a versatile tool for designing voltage-controlled, high-speed and energy-efficient spin-layertronic devices based on altermagnets.