Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures

Abstract

Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum materials are flat bands, which promote heavy conduction electrons and enhance e-e correlation effects. While the engineering of such flat bands has been demonstrated in graphene and two-dimensional transition metal dichalcogenides moir\'e superlattices and in lithography defined semiconductor moir\'e superlattices, conventional tear-and-stack fabrication methods face challenges due to inevitable twist-angle disorder, strain, and relaxation effects, leading to issues with reproducibility and scalability. Here, we explore the creation and modification of flat bands through vertically engineered III-V semiconductor heterostructures, without the need for twisting. These artificial quantum materials offer a reproducible and scalable means for producing high-quality flat-band materials via molecular beam epitaxy growth. Our investigation includes magnetotransport and infrared magneto-spectroscopy studies of quad-layer InAs/GaSb quantum wells, accompanied by k*p band structure calculations, which illustrate the flattening of bands in vertically designed heterostructures.