Engineering Nonlinear Optical Responses via Inversion Symmetry Breaking in Bilayer Bi2Se3

Abstract

Paucity of naturally occurring noncentrosymmetric materials is stimulating growing interest in engineered two-dimensional systems for nonlinear optical applications. Here, we show that breaking inversion symmetry in centrosymmetric bilayer Bi$_2$Se$_3$ through twisting, point-defect insertion, or the application of an external electric field unlocks rich nonlinear optical responses. In twisted bilayer Bi$_2$Se$_3$ at the first commensurate angle of 21.78$^\circ$, we find peak shift and injection current conductivities of -14 $ nm.\mu AV^{-2}$ and 104 $\times 10^8$ $nm.A V^{-2}s^{-1}$, respectively, which lie in the visible spectrum and enable efficient THz applications. The external electric field and point-defect insertion both transform the bilayer into C$_ {3v}$ symmetry, with the selenium vacancy (V$_{Se}$) achieving peak shift and injection current conductivities of -190 nm.$\mu AV^{-2}$ and -170 $\times 10^8$ $nm.A V^{-2}s^{-1}$. In all three cases, the peak nonlinear optical responses are found to be comparable to those of benchmark 2D materials such as GeS, and the broadband responses, including helicity-dependent current generation, make these engineered bilayers viable candidates for next-generation 2D photovoltaics.