Bias controlled Interlayer Exchange Coupling

Abstract

We demonstrate, using computer simulations and a non-equilibrium Greens function approach, that the sign of the out-of-equilibrium interlayer exchange coupling (ooeIEC) can change in the presence of an externally applied electrical bias. Our system consists of an insulating section connected to an exchange coupled ferromagnetic (FM) tri-layer, sandwiched between semi-infinite leads. When the exchange coupled trilayer contains a quantum-well state confined in the hybridisation gap (HG) of the FM, we find that a relatively small applied electrical bias can switch the lowest energy state of the tri-layer between parallel (P) and anti-parallel (AP) configurations. We consider three cases for the insulating section; a single tunnelling barrier, a resonant tunnelling barrier and an amorphous insulating barrier and, in each case, show that the bias dependence of the ooeIEC is strongly dependent on the system conductance. We find that the lowest switching current densities are achieved with strongly confined quantum well states.