Atomic-Scale Detection of N\'eel Vector Switching in the Single-Layer A-type Antiferromagnet Cr2S3-2D

Abstract

The detection of N\'eel vector switching in a single-layer A-type antiferromagnet marks an important step toward functional two-dimensional spintronics. Here, Cr$_2$S$_3$-2D, grown on graphene on Ir(110), is established as a first single-layer A-type antiferromagnet. Spin-polarized scanning tunneling microscopy reveals hysteresis loops with a large switching field and a pronounced dependence on island size. X-ray magnetic circular dichroism at the Cr L$_{2,3}$ edges exhibits a tiny signal with a linear magnetic field dependence, consistent with a nearly compensated antiferromagnetic ground state and a N\'eel temperature of about 160 K. Quantitative analysis of the island-size dependence of the switching field, together with first principles calculations, indicates a slight imbalance between the magnetic moments of the two Cr planes of Cr$_2$S$_3$-2D when supported on a substrate. This imbalance results in a net magnetization for the A-type antiferromagnet, which enables the 180$^\circ$ rotation of the N\'eel vector. Moreover, Cr$_2$S$_3$-2D retains its magnetic properties after several days of exposure to air.