Unlocking the O-Band: high-power, broadband soliton microcomb

Abstract

The O-band (1260-1360 nm), located near the minimum of chromatic dispersion of standard single-mode fiber, is the transmission window of major interest and importance for short-reach data-center interconnects. However, full capacity offered by this spectral band is yet to be unlocked, due to limited availability of scalable multi-wavelength, high-power, low noise O-band light engines. While Kerr microcombs in CMOS-compatible silicon nitride resonators provide mutually coherent wavelength channels with precise spacing and chip-scale footprints, their practical deployment in the O-band has been hindered by limited pump laser power, insufficient per-line power and the lack of flat, wideband amplification technologies to uniformly boost multiple coherent carriers. Here we demonstrate a high-power O-band soliton microcomb architecture that overcomes this bottleneck by combining self-injection-locked (SIL) operation in a Silicon Nitride microring with a single-stage bismuth-doped phosphosilicate fiber amplifier designed for wideband, flat-top gain. The SIL microcomb operates with an 834 GHz free spectral range and spans over 1050-1650 nm. The amplifier simultaneously boosts 21 O-band lines across 100 nm to powers exceeding 0 dBm per carrier without gain flattening or external equalization, while preserving low-noise characteristics. We validate each amplified microcomb line as a carrier across the entire O-band using dual-polarization 32 GBaud 64-QAM coherent transmission. This approach establishes a practical route towards high-power, broadband O-band microcomb engines for next-generation data-center interconnects and scalable photonic systems.