Proximitized Topological Insulator Charge Island Fabricated via In Situ Multi-Angle Stencil Lithography

Abstract

Hybrid superconductor-topological insulator (TI) nanostructures constitute a promising materials platform for exploring proximity-induced superconductivity in systems with topologically protected surface states. A key obstacle has been the realization of clean and well-controlled superconductor-TI interfaces, as TI surfaces rapidly degrade under ambient conditions. Here, we introduce a fully in situ, multi-angle stencil lithography technique that enables the fabrication of proximitized charge islands in TIs. The approach combines selective-area growth of (Bi,Sb)$_2$Te$_3$ nanoribbons with angle-controlled deposition of diffusion barriers, superconducting Al, and ultrathin oxide tunnel barriers, allowing scalable fabrication of hybrid nanostructures without post-growth processing. Low-temperature transport measurements reveal robust Coulomb blockade and a pronounced suppression of low-energy conductance which vanishes with magnetic field, consistent with proximity-induced superconductivity in the island. These results establish a versatile nanofabrication platform that enables access to previously unexplored TI-based hybrid quantum devices and opens new routes for investigating superconductivity in topological nanostructures.