Monolithically Integrated VO$_2$ Mott Oscillators for Energy-Efficient Spiking Neurons

Abstract

Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott phase-transition materials provide a promising route, as their abrupt insulator-to-metal transitions enable neuron-like thresholding and oscillatory dynamics in compact devices. Among these, vanadium dioxide (VO$_2$) stands out for its near-room-temperature transition, fast switching, and scalability. However, existing VO$_2$-based neuristors rely on discrete components, limiting integration density and system applicability. Here, we report monolithic back-end-of-the-line (BEOL) integration of one-transistor-one-VO2-memristor (1T-1MR) spiking neurons on CMOS-compatible platforms. VO$_2$ nanosheet devices are fabricated by pulsed-laser deposition below 430 {\deg}C on dielectrically isolated silicon-on-insulator (SOI) p-type junctionless field-effect transistors (JLFETs) in a compact 1T-1MR configuration. The architecture exhibits gate-tunable oscillations from 40 to 410 kHz in 60 nm-thick VO$_2$ devices with an active area of 6 $\mu$m$^2$, achieving energy consumption as low as 18 pJ per spike at room temperature, with memristor power dissipation of 8 $\mu$W and potential scaling toward sub-3 $\mu$W operation. We further uncover a non-monotonic dependence of oscillation frequency on current and temperature, along with bias-dependent stochastic firing dynamics, highlighting the rich behavior of integrated VO$_2$ memristor systems. Finally, we demonstrate voltage-controlled oscillator functionality and actively tunable resistive coupling of two nano-oscillators mediated by a JLFET. These results establish a pathway toward dense, energy-efficient, and monolithically integrated Mott-based neuromorphic hardware compatible with CMOS technology.