Weak Polar Optical Phonon Scattering Decouples Electron and Phonon Transport in Layered Thermoelectric Materials
Abstract
High-performance thermoelectric (TE) materials are crucial for efficient waste-heat recovery and solid-state cooling technologies. A persistent challenge in TE materials design arises from the strong interdependence among the electrical conductivity (σ), Seebeck coefficient (S), and lattice thermal conductivity (L). Layered compounds can effectively suppress L along the cross-plane direction owing to weak interlayer interactions; however, they often suffer from low carrier mobility (μ) caused by limited band dispersion and strong polar optical phonon (POP) scattering. Here, we perform high-throughput density functional theory calculations to screen 236 layered semiconductors and identify candidates with low effective mass (m*) and weak POP scattering. We identify 23 compounds with high cross-plane μ, among which 14 exhibit large power factors (S2σ). Notably, GaGe2Te stands out with exceptionally high cross-plane σ and power factor, enabled by a favorable combination of small m* and a small ionic dielectric constant. Simultaneously, GaGe2Te exhibits an ultralow cross-plane L of 0.57~W~m-1~K-1 at 300~K, originating from weak interlayer bonding and pronounced phonon anharmonicity. These results demonstrate an effective strategy to decouple electron and phonon transport in layered materials by mitigating POP scattering, thereby providing a promising pathway toward high-performance thermoelectric materials.
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