Geometric dependence of critical-current variation in Al/AlO${\rm _x}$/Al Josephson junctions: a model-based analysis

Abstract

Achieving uniform critical current across Josephson junctions is essential for the large-scale integration of superconducting quantum circuits. In this work, we statistically analyzed the variation of the critical current of Al/AlO${\rm _x}$/Al junctions using room-temperature tunnel resistance statistics, and identified the dominant contribution among the modeled sources of the variation based on their dependence on geometry and deposition conditions of junctions. Our model-based analysis reveals that fluctuations in the Al film thickness play the dominant role among the modeled contributing factors. Based on this analysis, we found that, in Dolan-bridge double-angle deposition, adopting a deposition angle of 30-degree for bilayer junctions significantly improves uniformity, yielding a relative standard deviation of 1.2% (0.5%) across a 9.75 mm (1.5 mm) square region.