Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure

Abstract

Scalable cryogenic memory is a critical yet unresolved requirement for large-scale quantum computing architectures, particularly for computing-in-memory schemes. We exploit the interplay between optical excitation and gate bias in an undoped Si/SiGe heterojunction field-effect transistor (HFET) to realize non-volatile memory functionality. The device exploits a high interface trap density ($D_{it} > 1.6 \times 10^{12}$~eV$^{-1}$cm$^{-2}$), which, in conjunction with the oxide thickness and dielectric constant, enables effective "locking" of the threshold voltage to the applied gate bias over a wide voltage range. Two of these states can be selected for binary operation, while the availability of multiple stable states within the same device enables multibit data storage. Robust cycling endurance ($>~10^3$ cycles) and long-term state retention ($>~10^4$~s) of the memory states at 1.5 K confirm the suitability of this approach for integration into Si/SiGe-based quantum computing architectures.