Improved selector behavior in ultrathin chromium-doped V$_2$O$_3$ films

Abstract

Devices based on the negative differential resistance effect in chromium doped V$_2$O$_3$ are considered to be promising as selector elements for use in emerging memory technologies, as well as for neuromorphic applications. It is shown by electrical measurements, that the switching effect is maintained for very thin films down to 5 nm, and even improved properties such as a low leakage current and an abrupt transition are observed. For these thicknesses, the behavior of crystalline and amorphous films becomes very similar; most strikingly, a forming step is required in both. Transmission electron microscopy reveals this to be likely due to a thin amorphous layer that forms at the interface to the TiN electrode. Elemental mapping further shows a complex distribution of the chromium dopants, as well as a diffusion of Ti into the layer from the electrode, which might be responsible for the improved properties.