Contacts to Low-Dimensional Semiconductors: Physical Theory and Analytical Model

Abstract

Metal contacts to low-dimensional semiconductors are critical for nanoelectronics, yet a general physical description has remained elusive. We present an analytical model for metal-induced gap states (MIGS), revealing a universal scaling law governed by semiconductor dimensionality. Linking MIGS to transport observables, we provide a unified formulation of Schottky barrier height, transfer length, and contact resistance. Our model explains recent experiments on carbon nanotubes and 2D materials, clarifying the fundamental criteria for achieving scalable, low-resistance contacts.