Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO$_{2}$-based Ferroelectrics

Abstract

HfO$_{2}$-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between oxygen vacancies, dopants, and structural defects that remains an active area of investigation. These defects shape the function-critical dynamic phenomena, such as polar phase stabilization, wake-up, fatigue, and imprint. In this Perspective, we review the limitations of established high-resolution structural characterization techniques and propose atom probe tomography (APT) as a powerful tool for the three-dimensional (3D), atomic-scale mapping of all constituent species in hafnia-based ferroelectric systems. By resolving individual dopants, vacancy clustering, and interfacial segregation, APT can facilitate a quantitative understanding of defect-property relations in hafnia-based ferroelectrics. We discuss current experimental challenges for APT application to ferroelectric oxides, demonstrate a proof-of-concept of atomic-scale reconstruction in a hafnia-based device stack, and highlight the potential of APT to guide the development of ferroelectric structures with enhanced reliability and performance.