Controllable Quantum Spin Hall Phases in Bi$_2$Te$_3$-Family van der Waals Heterobilayers

Abstract

The tunability and control of topological edge/surface states are crucial for the development of new device applications. In this work, by combining first-principles calculations and Wannier-based tight-binding methods, we show the emergence of quantum spin Hall phases in van der Waals heterostructures formed by stacking two trivial quintuple layers from the Bi$_2$Te$_3$ family. We demonstrate the tunability of the edge states under interlayer strain and external electric field effects, suggesting the possibility of switching topological edge states on/off by external control. Additionally, the quantum spin Hall edge channels remain robust against interlayer twist, highlighting their stability against external perturbations. Our results provide a new way to create and manipulate two-dimensional topological phases in systems based on Bi$_2$Te$_3$ family, which can be valuable for practical applications, such as topological field effect transistors and spintronic devices.