Anisotropic tunneling through magnetic barriers in 8-Pmmn borophene

Abstract

We present a theoretical study of electron tunneling through a magnetic barrier in 8-Pmmn borophene, created by depositing two ferromagnetic strips on the borophene sheet. Using a low-energy effective Hamiltonian that captures the anisotropic Dirac spectrum, we solve the Dirac equation in three regions and impose wave-function continuity at the interfaces. From the resulting spinor solutions, we compute current densities and determine transmission and reflection probabilities as functions of incident energy, angle, and barrier parameters. The transmission exhibits strong anisotropy due to the tilted Dirac cones, with pronounced suppression for specific incident directions, suggesting directional filtering of carriers. We further calculate the conductance using the Landauer-Büttiker formalism, revealing that both magnetic strength and barrier width can tune the charge transport properties. The results demonstrate that engineered magnetic barriers in 8-Pmmn borophene enable precise control over electron flow, offering a platform for anisotropic transport control and tunable quantum devices. The interplay between the intrinsic anisotropy of borophene and external magnetic barriers provides rich opportunities to manipulate Dirac fermions in two-dimensional systems.