Domain-Growth Kinetics and Scaling Laws Governing Pulse-Driven Accumulative Polarization Switching in HZO

Abstract

Accumulative polarization switching driven by sequential sub-coercive electric-field pulses offers a promising route toward low-power ferroelectric memories and neuromorphic devices. However, the kinetic regimes governing this nonequilibrium process remain poorly understood. Here, we employ a phase-field model based on the time-dependent Landau-Ginzburg formalism to investigate pulse-driven accumulative switching in ferroelectric HZO. By systematically varying the initial domain configuration, pulse amplitude, pulse-on time, and pulse-off time, we establish a quantitative link between microscopic domain-wall dynamics and macroscopic polarization accumulation. We show that the effective switched-domain radius follows distinct scaling regimes characterized by the local kinetic exponent. Initially, a local exponent greater than 1 indicates superlinear domain growth driven by enhanced irreversible domain-wall propagation under successive pulses. As switching progresses, a local exponent close to unity marks steady self-similar growth, whereas a local exponent less than 1 signifies decelerating dynamics caused by geometric confinement, depletion of switchable polarization, and relaxation-induced back switching. The transition between these regimes is governed by the competition between field-driven excitation during the pulse-on interval and spontaneous relaxation during the pulse-off interval. The initial domain geometry further influences this transition. Increasing the pulse amplitude or pulse-on duration extends the superlinear regime, whereas longer pulse-off times promote relaxation and suppress accumulation. These findings establish a unified scaling framework for pulse-driven accumulative switching, providing quantitative insight into nonequilibrium ferroelectric domain evolution and design guidelines for HZO-based memory and neuromorphic devices.