HPHT growth of centimeter-sized cubic boron nitride crystals

Abstract

Single crystals of cubic boron nitride (cBN) exceeding 10 mm in size were grown by the high-pressure high-temperature (HPHT) temperature-gradient method using a Ni-Cr-based solvent catalyst. Compared with the previously reported maximum crystal size of approximately 3 mm, this improvement was achieved by maintaining a stable precursor flux during one week of growth at a source temperature of 1950 °C. In contrast to diamonds, which were grown with the same HPHT cell and showed nearly isometric shapes, the cBN crystals had elongated shapes. We attribute this cBN morphology to a localized growth near the BN source due to the relatively low effective diffusivity of boron and nitrogen species in the metallic solvent.