Relativistic fine structure and resonance effects in electron-ion recombination and excitation of (e + C IV)
Anil K. Pradhan, Guo Xin Chen, Sultana N. Nahar, Hong Lin Zhang
Abstract
Relativistic close coupling calculations are reported for unified electronic recombination of (e + C IV) including non-resonant and resonant recombination processes, radiative and dielectronic recombination (RR and DR). Detailed comparison of the theoretical unified results with two recent experiments on ion storage rings (Mannervik etal. [1] and Schippers etal. [2]) shows very good agreement in the entire measured energy region 2s -- 2p with 2pnl resonances. The results benchmark theory and experiments to uncertainties of ~15%, and show that the resonant and the background cross sections are not an incoherent sum of separate RR and DR contributions. The limiting values of the DR cross sections, as n ---> infinity, are shown to correspond to those due to electron impact excitation (EIE) at the 2Po(1/2,3/2) fine structure thresholds, delineated for the first time. The near-threshold 2s 2S(1/2) - 2p 2Po(1/2,3/2) EIE cross sections are also compared with recent experimental measurements. The demonstrated threshold fine structure and resonance effects should be of general importance in excitation and recombination of positive ions.
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