Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
Abstract
We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large rs = 8.
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