Evidence For Heavy Hole and Light Hole Current Separation in P-Type Resonant Tunneling Diodes With Prewells
R. M. Lewis, H. P. Wei, S. Y. Lin, J. F. Klem
Abstract
We investigate the transport of holes through AlAs/In.10Ga.90As resonant tunneling diodes which utilize InxGa1-xAs prewells in the emitter with x=0,.10, and .20. The data show an increase in peak current and bias at resonance and a concurrent increase in the peak-to-valley ratio with increasing x. We explain this enhancement in tunneling as due to confinement (or localiz- ation) of charges in the prewell and the formation of direct heavy(light) hole to heavy(light) hole conduction channels as a consequence.
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