Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)
Ph. Ebert, K. Urban, L. Aballe, C. H. Chen, K. Horn, G. Schwarz, J. Neugebauer, M. Scheffler
Abstract
The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.
Create a lesson
Related papers
Role of defect trapping in the enhanced corrosion resistance of Ni-Mo alloys with yttrium and yttrium oxide additions
Jia-Hong Ke, Xinchang Zhang, Jingfan Yang et al.
Graphene-Confined Growth of Few-Layer PtSe2 via One-Step Selenization
Timea Ema Krajčovičová, Peter Kotrusz, Viera Skákalová et al.
DiffGA: Steering Frozen Diffusion Models for Materials Design via Evolutionary Search
Shivang Agarwal, Rodrigo Wang, Kevin Ryczko et al.
EpNet-Si: Atomic Form Factors Learned from Band Structures
Qiang Zhu
Investigation on Thermal Stability of Epi-GeSn Directly on Si (001)
Tharundev V, Dushyant Singh, Vigneshswari SR et al.
Pressure-Driven Evolution of the Physical Properties of Layered Y2GaB and Y2InB MAB Phases: A Comparative First-Principles Study
M. Rabi Us Sani Shapon, Md. Asif Afzal, Jubair Hossan Abir et al.