The Electrochemical Carbon Nanotube Field-Effect Transistor
M. Krueger, M. R. Buitelaar, T. Nussbaumer, C. Schoenenberger, L. Forro
Abstract
We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy shifts of order +/- 1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage the NTs are hole doped in air with EF ? 0.3-0.5 eV, corresponding to a doping level of ? 1013 cm-2. Hole-doping increases in the electrolyte. This hole doping (oxidation) is most likely caused by the adsorption of oxygen in air and cations in the electrolyte.
Create a lesson
Related papers
Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS2 Transistors
R. V. Upadya, M. Introna, X. Wu et al.
Spin swapping mediated by spin-orbital textures in centrosymmetric multiorbital materials
Chengyuan Cai, Hanchen Wang, Rui-Chun Xiao et al.
Electrostatics of Chern junctions in a magnetic field
Robin Durand, Pascal Simon, Ion Garate
Spin Simulators based on Exciton-Polariton Waveguide Networks
Kevin Dini, Simone Zanotti, Timothy C. H. Liew
The quantized Hall effect knows which way the current flows: mirror covariance and rectification in a laterally asymmetric Hall bar
A. Siddiki
Floquet-Volkov spin polarization in spin-degenerate Antiferromagnets
Jiyang Fan, Dinghui Wang, Tongshuai Zhu