Adsorption and two-body recombination of atomic hydrogen on 3He-4He mixture films
Abstract
We present the first systematic measurement of the binding energy Ea of hydrogen atoms to the surface of saturated 3He-4He mixture films. Ea is found to decrease almost linearly from 1.14(1) K down to 0.39(1) K, when the population of the ground surface state of 3He grows from zero to 6×1014 cm-2, yielding the value 1.2(1)× 10-15 K cm2 for the mean-field parameter of H-3He interaction in 2D. The experiments were carried out with overall 3He concentrations ranging from 0.1 ppm to 5 % as well as with commercial and isotopically purified 4He at temperatures 70...400 mK. Measuring by ESR the rate constants Kaa and Kab for second-order recombination of hydrogen atoms in hyperfine states a and b we find the ratio Kab/Kaa to be independent of the 3He content and to grow with temperature.
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