Spin-related transport in ultra small Si quantum dots
Leonid P. Rokhinson, L. J. Guo, D. C. Tsui, S. Y. Chou
Abstract
We investigated electron transport through ultra small Si quantum dots. We found that the B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. In some dots the number of electrons N in the dot can be tuned starting from zero, and the total spin of the dot can be mapped as a function of N and B. For one of the dots we deduced that the dot becomes spontaneously polarized at N=6 with a large spin change ΔS=3/2, demonstrating the essential features of spin blockade. Surprisingly, for N>20, the transitions with ΔS>1/2 do not lead to the suppression of the corresponding peaks at low temperatures.
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