Two-Dimensional Sigma-Hole Systems in Boron Layers: A First-Principles Study on Mg1-xNaxB2 and Mg1-xAlxB2
S. Suzuki, S. Higai, K. Nakao
Abstract
We study two-dimensional sigma-hole systems in boron layers by calculating the electronic structures of Mg1-xNaxB2 and Mg1-xAlxB2. In Mg1-xNaxB2, it is found that the concentration of sigma holes is approximately described by (0.8 + 0.8 x) * 1022 cm-3 and the largest attainable concentration is about 1.6 * 1022 cm-3 in NaB2. In Mg1-xAlxB2, on the other hand, it is found that the concentration of sigma holes is approximately described by (0.8 - 1.4 x) * 1022 cm-3 and sigma holes are disappeared at x of about 0.6. These relations can be used for experimental studies on the sigma-hole systems in these materials.
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