Charge dynamics and metal-insulator transition in Si$_{1-x}$Gd$_{x}$ and Si$_{1-x}$Y$_{x}$ alloys

Abstract

Carrier dynamics in amorphous a-Si$_{1-x}$RE$_{x}$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region ($\hbar ω<$ 1 eV) have been found to be anomalously sensitive to changes of temperature and/or magnetic field. The observed behavior is consistent with the model of hopping transport where the interaction of carriers with both the lattice and large core spin of Gd ions is taken into account.