Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
Abstract
We formulate a theory of doped magnetic semiconductors such as Ga1-xMnxAs which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature Tc as a function of magnetic coupling strength J and carrier density n. We find that Tc is determined by a subtle interplay between carrier density and magnetic coupling.
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