Preparation of Bi4ti3o12 Thin Films by a Pulsed Laser Ablation Deposition (PLAD) Method and their Applications for Ultraviole Detectors

Abstract

Bi4Ti3O12 (BIT) has been considered as material for UV detector since it has optical band gap of about 3.5 eV. Unlike the most used material for this purpose, such as GaN and AlN, BIT is a ferroelectric oxide material. It has shown good detection properties in the UV regions. We have developed a Pulsed Laser Ablation Deposition (PLAD) method for preparation of BIT thin films. The BIT films were grown on Si/SiO2/Pt(111) substrates and these films exhibit good crystalline properties with preferential orientation in c-axis. A structure of Al/Bi4Ti3O12/Pt(111)/Si(100) was fabricated for measurement of spectral distribution of the voltage responsivity. The maximum voltage responsivity and the spectral distribution significantly depend on the films preparations and treatments.