Electronic structure, phase stability and chemical bonding in Th2Al and Th2AlH4
P. Vajeeston, R. Vidya, P. Ravindran, H. Fjellvåg, A. Kjekshus, A. Skjeltorp
Abstract
We present the results of theoretical investigation on the electronic structure, bonding nature and ground state properties of Th2Al and Th2AlH4 using generalized-gradient-corrected first-principles full-potential density-functional calculations. Th2AlH4 has been reported to violate the "2 Årule" of H-H separation in hydrides. From our total energy as well as force-minimization calculations, we found a shortest H-H separation of 1.95 Å in accordance with recent high resolution powder neutron diffraction experiments. When the Th2Al matrix is hydrogenated, the volume expansion is highly anisotropic, which is quite opposite to other hydrides having the same crystal structure. The bonding nature of these materials are analyzed from the density of states, crystal-orbital Hamiltonian population and valence-charge-density analyses. Our calculation predicts different nature of bonding for the H atoms along a and c. The strongest bonding in Th2AlH4 is between Th and H along c which form dumb-bell shaped H-Th-H subunits. Due to this strong covalent interaction there is very small amount of electrons present between H atoms along c which makes repulsive interaction between the H atoms smaller and this is the precise reason why the 2 Å rule is violated. The large difference in the interatomic distances between the interstitial region where one can accommodate H in the ac and ab planes along with the strong covalent interaction between Th and H are the main reasons for highly anisotropic volume expansion on hydrogenation of Th2Al.
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