Structural phase control of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ thin films by epitaxial growth technique

Abstract

Epitaxial growth of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ thin films was studied by pulsed-laser deposition technique on three different substrates, SrTiO$_3$ (100), LaSrAlO$_4$ (001), and YAlO$_3$ (001). The (Nd,Sr,Ce)$_2$CuO$_4$-type structure appears at the initial growth stage on SrTiO$_3$ (100) when the film is deposited under the growth conditions optimized for (La,Sr)$_2$CuO$_4$. This (Nd,Sr,Ce)$_2$CuO$_4$-type structure can be eliminated by increasing the substrate temperature and the laser repetition frequency. Films on LaSrAlO$_4$ (001) maintain a La$_2$CuO$_4$-type structure as bulk samples, but those on YAlO$_3$ (001) show phase separation into La$_2$CuO$_4$- and Nd$_2$CuO$_4$-type structures. Such complicated results are explained in terms of the competition between lattice misfit and thermodynamic conditions. Interestingly the films with La$_2$CuO$_4$-type structure prepared on SrTiO$_3$ and LaSrAlO$_4$ show different surface structures and transport properties. The results indicate the possibility of controlling charge stripes of (La$_{1.48}$Nd$_{0.40}$Sr$_{0.12}$)CuO$_4$ as was demonstrated in (La,Ba)$_2$CuO$_4$ thin films by Sato et al. (Phys. Rev. B {\bf 62}, R799 (2000)).