Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov, M. Pepper, M. Y. Simmons, D. A. Ritchie
Abstract
On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, kBTτ/ >1. It is shown that the 'metallic' behaviour of the resistivity (dρ/dT>0) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant F0σ which controls the sign of dρ/dT.
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